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| PROCESS Small Signal Transistors N - Channel Silicon Amplifer J FET Chip CP210 Central TM Semiconductor Corp. PROCESS DETAILS Process Die Size Die Thickness Drain Bonding Pad Area Source Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization GEOMETRY GROSS DIE PER 4 INCH WAFER 53,730 PRINCIPAL DEVICE TYPES 2N4416A CMPF4416A EPITAXIAL PLANAR 15 x 15 MILS 8.0 MILS 3.2 X 4.0 MILS 3.2 X 4.0 MILS 3.2 X 4.0 MILS Al - 30,000A Au - 6,000A BACKSIDE GATE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (9 -September 2003) Central 16 TA = 25C TYP. VGS(OFF) = -5.0V TM PROCESS CP210 Semiconductor Corp. Typical Electrical Characteristics 5 VGS = 0V 4.5 4 TA = 25C TYP. VGS(OFF) = -5.0V -1.0V -1.5V 12 -0.5V 3.5 -1.0V -2.0V VGS = 0V -2.5V -0.5V -3.0V 3 2.5 2 1.5 1 0.5 0 20 0 8 -1.5V -2.0V -2.5V 4 -3.0V -3.5V -3.5V -4.0V 0 0 4 8 12 16 -4.0V 0.2 0.4 0.6 0.8 1 VDS, Drain-Source Voltage (V) VDS, Drain-Source Voltage (V) 1.6 TA = 25C TYP. VGS(OFF) = -1.2V 1.2 TA = 25C VGS = 0V TYP. VGS(OFF) = -1.2V -0.1V 1 VGS = 0V 1.2 0.8 -0.1V 0.8 -0.2V 0.6 -0.2V -0.3V 0.4 -0.3V 0.4 -0.4V -0.5V -0.4V 0.2 -0.5V -0.6V 0 0 4 8 12 -0.6V 0 20 0 0.4 0.8 1.2 1.6 2 16 VDS, Drain-Source Voltage (V) VDS, Drain-Source Voltage (V) 5 TA = -55C 4 TA = 25C 3 TA = 125C 2 1 VDG = 15V f = 1kHz VGS(OFF) = -5.0V 0 0.1 1 10 ID, Drain Current (mA) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (9 -September 2003) Central TM PROCESS CP210 Semiconductor Corp. Typical Electrical Characteristics 16 14 12 10 8 6 -2.3V VGS(OFF) = -5.0V VDS = 15V T A = 25C 900 800 700 600 500 400 300 200 100 -2.3V -5.0V VDS = 100mV VGS = 0 VGS(OFF) = -1.2V 4 2 0 0 0.8 1.6 2.4 3.2 4 -1.2V 0 -50 0 50 100 150 TA, Ambient Temperature (C) VGS, Gate-Source Voltage (-V) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R3 (9 -September 2003) |
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